Method of ONO integration into MOS flow

ABSTRACT

A method of ONO integration of a non-volatile memory device (e.g. EEPROM, floating gate FLASH and SONOS) into a baseline MOS device (e.g. MOSFET) is described. In an embodiment the bottom two ONO layers are formed prior to forming the channel implants into the MOS device, and the top ONO layer is formed simultaneously with the gate oxide of the MOS device.

RELATED APPLICATIONS

This application claims the benefit of U.S. Provisional Application No.61/183,021, filed Jun. 1, 2009, and U.S. Provisional Application No.61/172,324, filed Apr. 24, 2009.

TECHNICAL FIELD

Embodiments of the present invention relate to the field ofsemiconductor devices.

BACKGROUND

The fabrication of integrated circuits for logic products typicallyincludes a baseline process for the production ofmetal-oxide-semiconductor field-effect transistors (MOSFETs).Thicknesses, geometries, alignment, concentrations, etc. are stringentlycontrolled for each operation in such a baseline process to ensure thatthey are within specific tolerance ranges so that the resultant MOSFETswill function properly. For applications such as system-on-chipsilicon-oxide-nitride-oxide-semiconductor (SONOS) FETs are oftenintegrated into a MOSFET logic manufacturing process. This integrationcan seriously impact the baseline MOSFET process, and generally requiresseveral mask sets and expense.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A-1D illustrate the formation of deep wells in the substrate, inaccordance with an embodiment of the present invention.

FIGS. 2A-2B illustrate removing a pad layer from a non-volatile deviceregion of a substrate, in accordance with an embodiment of the presentinvention.

FIG. 3A illustrates the formation of a dielectric stack, in accordancewith an embodiment of the present invention.

FIGS. 3B-3C illustrate multiple layer charge-trapping layers, inaccordance with an embodiment of the present invention.

FIG. 4 illustrates a patterned dielectric stack above a non-volatiledevice region of a substrate, in accordance with an embodiment of thepresent invention.

FIGS. 5A-5B illustrate the formation of doped channel regions, inaccordance with an embodiment of the present invention.

FIG. 6 illustrates the removal of a pad layer from a MOS device regionand the removal of a sacrificial top layer from a non-volatile deviceregion of a substrate, in accordance with an embodiment of the presentinvention.

FIG. 7A illustrates the formation of a gate dielectric layer andblocking dielectric layer, in accordance with an embodiment of thepresent invention.

FIGS. 7B-7C illustrate the formation of a blocking dielectric layerconsuming a portion of a charge-trapping layer, in accordance with anembodiment of the present invention.

FIG. 7D illustrates a multiple layer gate dielectric layer and multiplelayer blocking dielectric layer, in accordance with an embodiment of thepresent invention.

FIG. 8 illustrates the formation of a gate dielectric layer, inaccordance with an embodiment of the present invention.

FIG. 9 illustrates the formation of a gate layer above a substrate, inaccordance with an embodiment of the present invention.

FIG. 10 illustrates the patterning of MOS device and non-volatile devicegate stacks, in accordance with an embodiment of the present invention.

DETAILED DESCRIPTION

Embodiments of the present invention disclose methods of ONO integrationinto a MOS flow. In the following description, numerous specific detailsare set forth, such as specific configurations, compositions, andprocesses, etc., in order to provide a thorough understanding of thepresent invention. In other instances, well-known processes andmanufacturing techniques have not been described in particular detail inorder to not unnecessarily obscure the present invention. Furthermore,it is to be understood that the various embodiments shown in the Figuresare illustrative representations and are not necessarily drawn to scale.

The terms “above,” “over,” “between,” and “on” as used herein refer to arelative position of one layer with respect to other layers. One layerdeposited or disposed above or under another layer may be directly incontact with the other layer or may have one or more intervening layers.One layer deposited or disposed between layers may be directly incontact with the layers or may have one or more intervening layers. Incontrast, a first layer “on” a second layer is in contact with thatsecond layer.

A method of integrating a non-volatile memory device and ametal-oxide-semiconductor (MOS) device is described. In an embodiment,the MOS device is a volatile memory device, logic device and/or analogdevice. While particular embodiments of the invention are describedherein with reference to a MOSFET device, it is understood thatembodiments are not so limited. In an embodiment, the non-volatilememory device is any device with an oxide-nitride-oxide (ONO) dielectricstack. In an embodiment, the non-volatile memory device is anerasable-programmable-read-only memory EEPROM device. In one embodiment,the non-volatile memory device is a floating gate FLASH device. Inanother embodiment, the non-volatile memory device is a non-volatilecharge trap memory device such as asemiconductor-oxide-nitride-oxide-semiconductor (SONOS). The first“semiconductor” in SONOS refers to a channel region material, the first“oxide” refers to a tunnel layer, “nitride” refers to a charge-trappinglayer, the second “oxide” refers to a blocking dielectric layer, and thesecond “semiconductor” refers to a gate layer. A SONOS-type device,however, is not limited to these specific materials. For example,depending upon the specific device, the charge-trapping layer couldinclude a conductor layer, semiconductor layer, or insulator layer.While the following embodiments of the present invention are describedwith reference to illustrations of a SONOS non-volatile memory device,embodiments are not limited to such.

In one aspect, embodiments of the invention disclose simultaneouslyforming the gate dielectric layer of a MOS device (e.g. MOSFET) and thetop ONO layer of a non-volatile memory device (e.g. the blockingdielectric layer a SONOS FET). Fabrication of the ONO dielectric stackmay be integrated into the baseline MOSFET manufacturing process forforming the MOSFET gate dielectric layer. A pad dielectric layer isformed above a volatile device region of a substrate. A patterneddielectric stack is formed above a non-volatile device region of thesubstrate. The patterned dielectric stack may comprise a tunnel layer,charge-trapping layer, and sacrificial top layer. The sacrificial toplayer is then removed from the dielectric stack in the non-volatiledevice region of the substrate. The pad dielectric layer is removed fromthe volatile device region of the substrate. Then, simultaneously, agate dielectric layer is formed above the volatile device region of thesubstrate and a blocking dielectric layer is formed above thecharge-trapping layer above the non-volatile device region of thesubstrate.

In another aspect, embodiments of the invention disclose forming thefirst oxide and nitride layers of an ONO dielectric stack prior toadding channel implants to the MOS device (e.g. MOSFET). The thermalbudget of forming the ONO dielectric stack may not impact the channeldopant profile for the MOS device. A pad dielectric layer is blanketdeposited or grown above the substrate. SONOS channel dopants areimplanted into the non-volatile device region of the substrate. The paddielectric layer is removed from the non-volatile device region of thesubstrate, and a dielectric stack is formed above the non-volatiledevice region of the substrate where the pad dielectric layer has beenremoved. The patterned dielectric stack may comprise a tunnel layer,charge-trapping layer, and sacrificial top layer. MOSFET channel dopantsare then implanted through the pad dielectric layer and into the MOSregion of the substrate. The pad dielectric layer is removed from theMOS device region of the substrate simultaneously with the sacrificialtop layer from the non-volatile device region of the substrate.

Referring to FIG. 1A, in an embodiment, the process begins with forminga protective pad layer 102 above the surface of a substrate 100.Substrate 100 may be composed of any material suitable for semiconductordevice fabrication. In one embodiment, substrate 100 is a bulk substratecomposed of a single crystal of a material which may include, but is notlimited to, silicon, germanium, silicon-germanium or a III-V compoundsemiconductor material. In another embodiment, substrate 100 includes abulk layer with a top epitaxial layer. In a specific embodiment, thebulk layer is composed of a single crystal of a material which mayinclude but is not limited to, silicon, germanium, silicon-germanium, aIII-V compound semiconductor material and quartz, while the topepitaxial layer is composed of a single crystal layer which may include,but is not limited to, silicon, germanium, silicon-germanium and a III-Vcompound semiconductor material. In another embodiment, substrate 100includes a top epitaxial layer above a middle insulator layer which isabove a lower bulk layer. For example, the insulator may be composed ofa material such as silicon dioxide, silicon nitride and siliconoxy-nitride.

Isolation regions 104 may be formed in the substrate 100. In anembodiment, isolation regions 104 separate a MOS device region and anon-volatile device region. In a particular embodiment, isolationregions 104 separate a high voltage field-effect transistor (HVFET)region 105, a SONOS FET region 108, an in/out select field-effecttransistor (IO FET) 106 and a low voltage field-effect transistor(LVFET) region 107. In an embodiment, substrate 100 is a siliconsubstrate, pad layer 102 is silicon oxide, and isolation regions 104 areshallow trench isolation regions. Pad layer 102 may be a native oxide,or alternatively a thermally grown or deposited layer. In an embodiment,pad layer 102 is thermally grown with a dry oxidation technique at atemperature of 800° C.-900° C. to a thickness of approximately 100angstroms.

Dopants are then implanted into substrate 100 to form deep wells of anydopant type and concentration. FIGS. 1A-1D illustrate the separateformation of deep wells for each particular device region of thesubstrate, however, it is to be appreciated that deep wells can beformed for multiple device regions of the substrate at the same time. Ina particular embodiment illustrated in FIG. 1A, photoresist layer 110 isformed above pad layer 102 and patterned to form an opening above HVFETregion 105. Dopants are implanted into the substrate to form deep well111 in HVFET region 105 of the substrate. As illustrated in FIG. 1B,lithographic techniques, patterning, and implantation can be used toform a separate patterned photoresist layer 115 and deep well 112 in IOFET region 106. As illustrated in FIG. 1C, lithographic techniques,patterning, and implantation can be used to form a separate patternedphotoresist layer 117 and deep well 113 in LVFET region 107. Asillustrated in FIG. 1D, lithographic techniques, patterning, andimplantation can be used to form a separate patterned photoresist layer119 and deep well 114 in SONOS FET region 108. Dopants are alsoimplanted into substrate 100 to form doped channel region 116. Asillustrated in the embodiment of FIG. 1D, doped channel regions are notformed in the MOSFET regions 105, 106, or 107 so that out-diffusion doesnot occur during subsequent high temperature operations, and thebaseline MOSFET fabrication process for the doped channel region doesnot need to be altered.

In another embodiment, doped channel regions are also formed for the IOFET region 106, LVFET region 107 and HVFET region 105 during theimplantation operations illustrated in FIGS. 1A-1D. In such anembodiment, the doped channel regions may diffuse during subsequentprocessing operations. Accordingly, such diffusion may need to befactored into a redesigned baseline MOSFET fabrication process.

Referring to FIGS. 2A-2B, pad layer 102 is then removed from thenon-volatile device region 108. In one embodiment, pad layer 102 isremoved utilizing a dry-wet technique. Referring to FIG. 2A, the bulk ofthe pad layer 102 is removed using any suitable dry etching technique,such as a fluorine-based chemistry. In an embodiment, at least 85% ofthe pad layer 102 above the non-volatile device region 108 is removedwith the dry etching technique. Referring to FIG. 2B, patternedphotoresist layer 119 is then removed utilizing a suitable photoresistremoval chemistry such as a sulfuric acid based chemistry, with anoxygen based plasma and ash, or a combination of both. A gate pre-cleanchemistry is then applied to the substrate to remove the remainder ofpad layer 102 from the surface of the substrate 100 in the non-volatiledevice region 108. In an embodiment, the pre-clean chemistry is a dilutehydrofluoric acid (HF) solution or buffered-oxide-etch (BOE) solutioncontaining HF and ammonium fluoride (NH₄F). In such an embodiment,minimal lateral etching of pad layer 102 occurs in the opening abovenon-volatile device region 108, and pad layer 102 is also slightlyetched above other regions of the substrate. In an embodiment, no morethan 25% of the original thickness of pad layer 102 is removed fromabove regions 105, 106 and 107.

As illustrated in the embodiment of FIG. 3A, a dielectric stack 120 isthen formed above the substrate 100. In an embodiment, the dielectricstack 120 includes a tunnel layer 122, a charge-trapping layer 124, anda sacrificial top layer 126. Tunnel layer 122 may be any material andhave any thickness suitable to allow charge carriers to tunnel into thecharge-trapping layer under an applied gate bias while maintaining asuitable barrier to leakage when the device is unbiased. In anembodiment, tunnel layer 122 is silicon dioxide, silicon oxy-nitride, ora combination thereof. Tunnel layer 122 can be grown or deposited. Inone embodiment, tunnel layer 122 is grown by a thermal oxidationprocess. For example, a layer of silicon dioxide may be grown utilizingdry oxidation at 750 degrees centigrade (° C.)-800° C. in an oxygenatmosphere. In one embodiment, tunnel layer 122 is grown by a radicaloxidation process. For example, a layer of silicon dioxide may be grownutilizing in-situ steam generation (ISSG). In another embodiment, tunneldielectric layer 122 is deposited by chemical vapor deposition or atomiclayer deposition and is composed of a dielectric layer which mayinclude, but is not limited to silicon dioxide, silicon oxy-nitride,silicon nitride, aluminum oxide, hafnium oxide, zirconium oxide, hafniumsilicate, zirconium silicate, hafnium oxy-nitride, hafnium zirconiumoxide and lanthanum oxide. In another embodiment, tunnel layer 122 is abi-layer dielectric region including a bottom layer of a material suchas, but not limited to, silicon dioxide or silicon oxy-nitride and a toplayer of a material which may include, but is not limited to siliconnitride, aluminum oxide, hafnium oxide, zirconium oxide, hafniumsilicate, zirconium silicate, hafnium oxy-nitride, hafnium zirconiumoxide and lanthanum oxide. Thus, in one embodiment, tunnel layer 122includes a high-K dielectric portion. In a specific embodiment, tunnellayer 122 has a thickness of 18-20 angstroms.

Charge-trapping layer 124 may be any material and have a thickness whichis greater than the nominal thickness suitable to store charge, since atop portion of the charge trapping layer 124 is consumed during asubsequent processing operation. In an embodiment, charge-trapping layeris 105-135 angstroms thick. In an embodiment, charge-trapping layer 124is formed by a chemical vapor deposition technique and is composed of adielectric material which may include, but is not limited tostoichiometric silicon nitride, silicon-rich silicon nitride, siliconoxy-nitride and oxygen rich silicon oxy-nitride. In an embodiment,charge trapping layer 126 includes multiple layers which are created bymodifying the flow rate of ammonia (NH₃) gas, nitrous oxide (N₂O) anddichlorosilane (SiH₂Cl₂). The flow of dichlorosilane can be increased tocreate a silicon rich film such as silicon nitride. The flow rate ofnitrous oxide can be increased to create an oxide rich film such assilicon oxy-nitride. The flow rate of ammonia can be increased to createa nitrogen rich film such as silicon nitride.

In one embodiment, charge-trapping layer 124 is composed of a lowerlayer and an upper layer, with the upper layer being more readilyoxidized than the lower layer. In an embodiment, the lower layer has agreater oxygen content than the upper layer, and the upper layer has agreater silicon content than the lower layer. For example, asillustrated in FIG. 3B, charge-trapping layer 124 is composed of lowerlayer 124A and upper layer 124B. Lower layer 124A may comprise siliconoxy-nitride which contains more oxygen than the upper layer 124B, andthe upper layer 124B may comprise silicon nitride or silicon oxy-nitridewhich contains more silicon than the lower layer 124A. In an embodiment,lower layer 124A comprises 30%+/−5% oxygen, 20%+/−10% nitrogen, and50%+/−10% silicon, by atomic percent. In an embodiment, the upper layercomprises 0-7% oxygen, 30-57% nitrogen, and 43-65% silicon, by atomicpercent. In an embodiment, upper layer 124B comprises stoichiometricSi₃N₄. In an embodiment, the lower layer 124A is deposited by flowingdichlorosilane, ammonia and nitrous oxide into a chemical vapordeposition chamber at a temperature of approximately 750° C.-850° C. Inan embodiment, lower layer 124A is 40-50 angstroms thick and upper layer124B is approximately 70-80 angstroms thick.

In another embodiment illustrated in FIG. 3C, charge trapping layer 124is composed of a lower layer, middle layer and upper layer. In anembodiment, lower layer 124A′ is oxide rich, middle layer 124C′ issilicon rich, and upper layer 124B′ is silicon and/or nitrogen rich. Inan embodiment, lower layer 124A′ is composed of silicon oxy-nitride,middle layer 124C′ is composed of silicon oxy-nitride, and upper layer124B′ is composed of silicon oxy-nitride or Si₃N₄. In an embodiment,lower layer 124A′ comprises 30%+/−5% oxygen, 20%+/−10% nitrogen, and50%+/−10% silicon, by atomic percent. In an embodiment, middle layer124C′ comprises 5%+/−2% oxygen, 40%+/−10% nitrogen, and 55%+/−10%silicon, by atomic percent. In an embodiment, upper layer 124B′comprises 0-7% oxygen, 30-57% nitrogen, and 43-65% silicon, by atomicpercent. The thickness of upper layer 124B′ is adjusted such that nomore than 10% of middle layer 124C′ is consumed during the operationdescribed with regard to FIG. 7C. In an embodiment, lower layer 124A′ is40-50 angstroms thick, middle layer 124C′ is 40-50 angstroms thick, andupper layer 124B′ is approximately 30 angstroms thick.

Referring again to FIG. 3A, a sacrificial top layer 126 is blanketdeposited above charge-trapping layer 124. In an embodiment, sacrificialtop layer 126 is silicon dioxide. In an embodiment, sacrificial toplayer 126 is deposited utilizing a chemical vapor deposition techniqueutilizing precursors such as dicholorisilane and nitrous oxide. In anembodiment, the entire dielectric stack 120 can be formed in a chemicalvapor deposition chamber such as a low pressure chemical vapordeposition (LPCVD) chamber. In one embodiment, tunnel layer 122 isthermally grown in the LPCVD chamber, while charge-trapping layer 124and sacrificial top layer 126 are both deposited in the LPCVD chamber.

The dielectric stack 120 is then patterned above the non-volatile deviceregion utilizing standard lithographic techniques as illustrated in theembodiment of FIG. 4. In an embodiment, patterning comprises dry etchingwith a fluorine based chemistry. In an embodiment, etching stops on thepad layer 102 and does not expose substrate 100 in the MOS device region106. In such an embodiment, the pad layer 102 can protect the topsurface of substrate 100 from damage during a subsequent implantationoperation. In an alternative embodiment, pad layer 102 may be removedfrom the substrate utilizing a conventional pre-clean chemistry such asa diluted HF solution. In such an embodiment, doped channel regions mayhave already been formed in the substrate during a previous processingoperation, such as during the deep well formation illustrated in FIGS.1A-1D.

Referring to the embodiment of FIG. 5A, a photoresist layer 128 isformed above the substrate and patterned above the MOS device region106. Dopants are implanted into the substrate 100 to form doped channelregion 130. In an embodiment, pad layer 102 protects the top surface ofsubstrate 100 from damage during the implantation operation. Thelithographic and implantation techniques may be repeated to form dopedchannel regions 131 and 133 as illustrated in FIG. 5B.

Referring to FIG. 6, photoresist layer 128, pad layer 102 andsacrificial top layer 126 are removed. Photoresist layer 128 is removedutilizing any suitable photoresist removal chemistry. In an embodiment,pad layer 102 and sacrificial top layer 126 are simultaneously removed.In an embodiment, the substrate is exposed to a standard gate pre-cleanchemistry such as a dilute HF solution or BOE solution to remove thesacrificial top layer 126 and pad layer 102. As illustrated in FIG. 6,some amount of pad oxide layer 102 may remain underneath an edge oftunnel layer 122 depending upon exposure time to gate pre-cleanchemistry and method of forming tunnel layer 122.

Referring to the embodiment of FIG. 7A, gate dielectric layer 132 andblocking dielectric layer 134 are simultaneously formed. Layers 132 and134 may be formed utilizing any technique suitable for the formation ofa MOS device gate dielectric layer. In an embodiment, layers 132 and 134may be formed utilizing a technique capable of oxidizing both thesubstrate 100 and charge-trapping layer 124. In an embodiment gatedielectric layer 132 and blocking dielectric layer 134 are formedutilizing a radical oxidation technique, such as ISSG or plasma-basedoxidation, and consume a portion of the substrate 100 andcharge-trapping layer 124, respectively.

In an embodiment, the thickness of the charge trapping layer 124 and thecomplete sacrificial layer 126 removal during the gate pre-cleanoperation illustrated in FIG. 6 can be tailored such that blockingdielectric layer 134 can be formed simultaneously with the gatedielectric layer 132 in accordance with an established MOSFET baselineprocess. Thus, charge trapping layer 124 can be integrated into anestablished baseline MOSFET process utilizing the same parameters asthose established in the baseline MOSFET process for forming gatedielectric layer 132 in a non-integrated scheme. In addition, the hightemperatures such as 750° C.-850° C. which may be used to form thedielectric gate stack 120 illustrated in FIG. 4 do not affect thebaseline dopant profile in the non-volatile device doped channel region130 because the tunnel layer 122 and charge-trapping layer 124 areformed prior to implanting the doped channel region 130, and blockingdielectric layer 134 is formed simultaneously with forming the gatedielectric layer 132. Accordingly, in such an embodiment any diffusionof channel dopants during formation of the gate dielectric layer 132 isaccounted for in the baseline MOSFET logic manufacturing process.

In an embodiment, blocking dielectric layer 134 may be composed of anymaterial and have any thickness suitable to maintain a barrier to chargeleakage without significantly decreasing the capacitance of thenon-volatile device gate stack. In one embodiment, the thickness of theblocking dielectric layer 134 is determined by the thickness for whichgate dielectric layer 132 is to be made, and the composition of theuppermost part of charge-trapping layer 124. In an embodimentillustrated in FIG. 7B and FIG. 7C, blocking dielectric layer 134 isgrown by consuming an upper portion of charge-trapping layer 124. In oneembodiment illustrated in FIG. 7B, blocking dielectric layer 134 isgrown by consuming a portion of upper layer 124B in FIG. 3B. In anembodiment, blocking dielectric layer 134 consumed approximately 25-35angstroms of blocking dielectric layer 134. In one embodimentillustrated in FIG. 7C, blocking dielectric layer 134 is grown byconsuming a portion of upper layer 124B′ in FIG. 3C. In an embodiment,the upper layer 124B′ is completely consumed to provide a blockingdielectric layer 134 with uniform composition. In an embodiment, upperlayer 124B′ is completely consumed and less than 10% of the thickness ofmiddle layer 124C′ is consumed during the formation of blockingdielectric layer 134. In an embodiment, upper layer 124B or 124B′ issilicon oxy-nitride containing approximately 30-57 atomic percentnitrogen. In such an embodiment, where blocking dielectric layer 134 isformed by ISSG, the blocking layer 134 may have a uniform siliconoxy-nitride composition containing less than 10 atomic percent nitrogen.In an embodiment, the thickness of the blocking dielectric layer 134 isapproximately 25-35 angstroms.

In another embodiment, gate dielectric layer 132 and/or blockingdielectric layer 134 can include multiple layers. In an embodimentillustrated in FIG. 7D, a second dielectric layer 132B/134B is depositedabove the oxidized portion 132A of the substrate and 134A of thecharge-trapping layer. In an embodiment the second layer 132B/134B mayhave a larger dielectric constant than the underlying oxidized portion132A/134A. For example, layer 132B/134B may comprise a material such as,but not limited to, aluminum oxide, hafnium oxide, zirconium oxide,hafnium oxy-nitride, hafnium zirconium oxide or lanthanum oxide.

Referring to FIG. 8, in accordance with a specific embodiment aphotoresist layer 138 is formed above the substrate and patterned toform an opening above LVFET region 107. Gate dielectric layer 132 isthen removed from LVFET region 107. In an embodiment, gate dielectriclayer 132 is removed by exposure to a dilute HF solution, or BOEsolution. A replacement gate dielectric layer 136 is then formed abovethe exposed portion of substrate 100. Any suitable method for forming agate dielectric layer in a MOS memory device may be utilized such as,but not limited to, dry oxidation or ISSG. Photoresist layer 138 is thenremoved from the substrate utilizing any suitable photoresist removalchemistry.

Referring to the embodiment of FIG. 9, a gate layer 140 is thendeposited above the substrate. Gate layer 140 may be composed of anyconductor or semiconductor material suitable for accommodating a biasduring operation of the non-volatile and MOS memory devices. Inaccordance with an embodiment, gate layer 140 is formed by a chemicalvapor deposition process and is composed of doped poly-crystallinesilicon. In another embodiment, gate layer 140 is formed by physicalvapor deposition and is composed of a metal-containing material whichmay include but is not limited to, metal nitrides, metal carbides, metalsilicides, hafnium, zirconium, titanium, tantalum, aluminum, ruthenium,palladium, platinum, cobalt and nickel. In one embodiment, gate layer140 is a high work-function gate layer.

Referring to the embodiment of FIG. 10, non-volatile and MOS device gatestacks 146-149 may be formed through any process suitable to providesubstantially straight sidewalls and with high selectivity to thesubstrate 100. In accordance with an embodiment, gate stacks 146-149 arepatterned by lithography and etching. In an embodiment, etching isanisotropic and utilizes gases such as, but not limited to, carbontetrafluoride (CF₄), O₂, hydrogen bromide (HBr) and chlorine (Cl₂). In aparticular embodiment, HVFET gate stack 147 comprises gate layer 145 andgate dielectric layer 132. SONOS FET gate stack 146 comprises gate layer142, blocking dielectric layer 134, charge-trapping layer 124, andtunnel layer 122. IO FET gate stack 148 comprises gate layer 144 andgate dielectric layer 132. LVFET gate stack 149 comprises gate layer 147and gate dielectric layer 136.

Fabrication of MOS (e.g. MOSFET) and non-volatile (e.g. SONOS FET)memory devices may be completed utilizing conventional semiconductorprocessing techniques to form source and drain regions, spacers, andcontact regions.

In the foregoing specification, various embodiments of the inventionhave been described for integrating non-volatile and MOS memory devices.In an embodiment, the dielectric gate stack of the non-volatile devicecan be integrated into the MOS memory process flow without affecting thebaseline process for forming the MOS device channel dopants and gatedielectric layer. It is appreciated that embodiments are not so limited.It will, however, be evident that various modifications and changes maybe made thereto without departing from the broader spirit and scope ofthe invention as set forth in the appended claims. The specification anddrawings are, accordingly, to be regarded in an illustrative senserather than a restrictive sense.

1. A method of integrating a non-volatile memory device and aMOS devicecomprising: forming a pad dielectric layer above a first region of asubstrate; forming a patterned dielectric stack above a second region ofsaid substrate, said patterned dielectric stack comprising a tunnellayer, a charge-trapping layer, and a sacrificial top layer; removingsaid sacrificial top layer from said second region of said substrate;removing said pad dielectric layer from said first region of saidsubstrate; simultaneously forming a gate dielectric layer above saidfirst region of said substrate and a blocking dielectric layer abovesaid charge-trapping layer; and simultaneously removing said sacrificialtop layer from said second region of said substrate and said paddielectric layer from said first region of said substrate.
 2. The methodof claim 1, wherein simultaneously removing said sacrificial top layerand said pad dielectric layer comprises applying a solution comprisinghydrofluoric acid (HF).
 3. The method of claim 1, wherein forming saidpatterned dielectric stack comprises growing said tunnel layer.
 4. Themethod of claim 1, wherein forming said patterned dielectric stackcomprises depositing said tunnel layer.
 5. The method of claim 1,wherein said charge-trapping layer comprises multiple layers.
 6. Themethod of claim 5, wherein said multiple layers comprises an upper layerwhich is more readily oxidized than a lower layer.
 7. The method ofclaim 6, wherein growing said gate dielectric layer consumes a part ofsaid substrate and growing said blocking dielectric layer consumes apart of said charge-trapping layer.
 8. The method of claim 7, whereingrowing said gate dielectric layer and said blocking dielectric layercomprises a radical oxidation technique.
 9. The method of claim 8,wherein said radical oxidation technique is in-situ steam generation.10. The method of claim 8, wherein growing said blocking dielectriclayer completely consumes said upper layer.
 11. The method of claim 8,wherein said upper layer comprises 30-40 atomic percent nitrogen priorto growing said blocking dielectric layer.
 12. The method of claim 11,wherein said blocking dielectric layer comprises less than 10 atomicpercent nitrogen.
 13. The method of claim 8, wherein said blockingdielectric layer has substantially uniform atomic oxygen content. 14.The method of claim 10, wherein said blocking dielectric layer comprises20-30% of the total thickness of said blocking dielectric layer,unconsumed charge-trapping layer, and tunnel layer.
 15. The method ofclaim 8, wherein forming said patterned dielectric stack comprises:forming a blanket tunnel layer, blanket charge-trapping layer, andblanket sacrificial top layer; and dry etching said blanket sacrificialtop layer, blanket charge-trapping layer, and said blanket tunnel layerto expose said pad dielectric layer.
 16. The method of claim 15, furthercomprising implanting channel implants through said exposed paddielectric layer and into said first region of said substrate.
 17. Themethod of claim 16, further comprising forming ametal-oxide-semiconductor field effect transistor (MOSFET) above saidfirst region of said substrate.
 18. The method of claim 17, furthercomprising forming a silicon-oxide-nitride-oxide-silicon (SONOS) memorydevice above said second region of said substrate.
 19. A methodcomprising: forming a pad dielectric layer above a substrate; implantingSONOS channel dopants into a non-volatile device region of saidsubstrate; removing said pad dielectric layer from said non-volatiledevice region of said substrate; forming a dielectric stack above saidnon-volatile device region of said substrate, wherein said dielectricstack comprises a lower oxide layer, middle nitride layer, andsacrificial top layer; implanting MOSFET channel dopants through saidpad dielectric layer and into a MOS device region of said substrate;removing said pad dielectric layer from said MOS device region of saidsubstrate; and simultaneously removing said pad oxide layer and saidsacrificial top layer to form an oxide-nitride stack.
 20. The method ofclaim 19, further comprising simultaneously growing a gate dielectriclayer from said MOS device region of said substrate and a top oxidelayer from said oxide-nitride stack.
 21. The method of claim 20, whereinsaid simultaneously growing comprises a radical oxidation technique. 22.The method of claim 21, wherein said radical oxidation technique isin-situ steam generation.
 23. The method of claim 21, further comprisingforming a metal-oxide-semiconductor field effect transistor above saidMOS device region of said substrate.
 24. The method of claim 23, furthercomprising forming a silicon-oxide-nitride-oxide-silicon memory deviceabove said non-volatile device region of said substrate.